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1、Chin.Phys.BVol.26,No.1(2017)017304Lowpower?uorineplasmaeffectsonelectricalreliabilityofAlGaN/GaNhighelectronmobilitytransistorLingYang(楊凌)1,2,?,Xiao-WeiZhou(周小偉)1,2,Xiao-HuaMa(馬曉華)1,2,LingLv(呂玲)1,2,Yan-RongCao(曹艷榮)4,Jin-ChengZhang(張進成)1,3,andYueHao(郝躍)1,31StateKeyDisciplineLa

2、boratoryofWideBandgapSemiconductorTechnology,XidianUniversity,Xi’an710071,China2SchoolofAdvancedMaterialsandNanotechnology,XidianUniversity,Xi’an710071,China3SchoolofMicroelectronics,XidianUniversity,Xi’an710071,China4SchoolofMechano-ElectronicEngineering,XidianUniversity,Xi’a

3、n710071,China(Received25July2016;revisedmanuscriptreceived17October2016;publishedonline22December2016)ThenewelectricaldegradationphenomenonoftheAlGaN/GaNhighelectronmobilitytransistor(HEMT)treatedbylowpower?uorineplasmaisdiscovered.Thesaturatedcurrent,on-resistance,thresholdvo

4、ltage,gateleakageandbreak-downvoltageshowthateachexperiencesasigni?cantchangeinashorttimestress,andthenkeepsunchangeable.Themigrationphenomenonof?uorineionsisfurthervalidatedbytheelectronredistributionandbreakdownvoltageenhance-mentafteroff-statestress.Theseresultssuggestthatt

5、helowpower?uorineimplantionstaysinanunstablestate.ItcausestheelectricalpropertiesofAlGaN/GaNHEMTtopresentearlydegradation.Anewmigrationanddegradationmechanismofthelowpower?uorineimplantionundertheoff-stresselectricalstressisproposed.Thelowpower?uorineionswoulddriftatthebeginni

6、ngoftheoff-statestress,andthenaccumulatebetweengateanddrainnearbythegateside.Duetothestrongelectronegativityof?uorine,theaccumulationofthefront?uorineionswouldpreventthesubsequent?uorineionsfromdrifting,therebyalleviatingfurtherthedegradationofAlGaN/GaNHEMTelectricalproperties

7、.Keywords:AlGaN/GaNHEMT,lowplasmapower,?uorineimplantion,earlyelectricalreliabilityPACS:73.61.Ey,85.30.Tv,85.30.DeDOI:10.1088/1674-1056/26/1/0173041.Introductionplanted?uorineionswillin?uencestabilityandreliabilityofAlGaN/GaNHEMTduringthedeviceoperation,especiallyThenormally-o

8、ffoperationofAlGaN/GaNtran-underhighelectric-?eldelectricalst